个人履历

刘强，现任中国科学院上海微系统与信息技术研究所助理研究员。2021年于中科院上海微系统所取得博士学位，曾在上海微技术工业研究院、上海集成电路材料研究院从事先进SOI衬底材料开发及先进集成电路器件研发工作，具有丰富的集成电路材料与器件工艺研发经验，于2022年6月加入中国科学院上海微系统与信息技术研究所。刘强长期从事集成电路材料与工艺器件领域研究工作，目前主要研究方向为SOI材料与器件。在IEEE Electron Device Letters、IEEE Transactions of Electron Devices、Photonics Research、IEEE Journal of the Electron Devices Society等期刊发表SCI论文10余篇，申请发明专利50余件，已授权20余件。入选嘉定区高层次引进人才、上海市超级博士后计划、上海市启明星扬帆计划等。

代表性论文

1. Jin Chen, Qiang Liu, Yuxin Liu, Zhiqiang Mu, Xing Wei, Wenjie Yu, A Novel Approach to Integrating Thermal Performance and Total Ionizing Dose Hardening in Void Embedded Silicon-on-insulator MOSFET, IEEE Transactions of Electron Devices, 2025, 72(1), 51-56.

2. Jin Chen, Qiang Liu, Zhiqiang Mu, Xing Wei, Wenjie Yu, Total Ionizing Dose Hardening of Planar SOI MOSFET Through an Optimal Design Combining Embedded Void and H-Gate Structures, IEEE Electron Device Letters, 2023, 44(10):1608-1611.

3. Yijun Qian, Qiang Liu, Jialun Yao, Xiaowei Wang, Amit Kumar Shukla, Fengyu Liu, Tao Wu, Kai Lu, Yemin Dong, Xing Wei, Wenjie Yu, Zhiqing Mu, Yumeng Yang; Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET, IEEE Journal of the Electron Devices Society, 2023, 11: 319-324.

4. Qiang Liu, Hongyang Zhou, Xin Jia, Yumeng Yang, Zhiqiang Mu, Xing Wei, Wenjie Yu, Novel void embedded design for total ionizing dose hardening of silicon-on-insulator MOSFET, IEEE Electron Device Letters, 2022, 43(11), 1814-1817.

5. Qiang Liu, Zhiqiang Mu, Chenhe Liu, Lantian Zhao, Lingli Chen, Yumeng Yang, Xing Wei, Wenjie Yu, Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate, IEEE Electron Device Letters, 2021,42(5), 657-660.