个人履历

沈玲燕，现任中国科学院上海微系统与信息技术研究所副研究员、硕士生导师。2012年获北京邮电大学应用物理学专业学士学位；2017年获中国科学院上海微系统与信息技术研究所微电子与固体电子学博士学位；2015年-2016年，作为联合培养博士生在德国弗劳恩霍夫协会集成系统与元器件研究所（Fraunhofer IISB）学习。2017年10月至今在中国科学院上海微系统与信息技术研究所工作。

沈玲燕长期从事宽禁带半导体功率器件及可靠性研究，在器件结构设计、制备工艺、表界面优化及动态特性表征方面具有丰富研究经验，相关研究成果被著名半导体科学网“Semiconductor Today”报道。在IEEE Transactions on Power Electronics、IEEE Electron Device Letters、IEEE Transactions on Electron Devices等期刊上累计发表学术论文30余篇，申请国内外发明专利19件。入选上海市青年科技英才扬帆计划、嘉定区青年科技英才。

代表性论文

1. Wenyao Feng†, Lingyan Shen†, et al., "Dynamic Performance Analysis of p-GaN HEMTs with Floating Substrates by Substrate Capacitance Coupling Model", IEEE Transactions on Electron Devices, Available on line, 2025. 

2. Yufei Tian, Ruiyan Pan, Lingyan Shen*, et al., "Monolithic Integration of p-GaN HEMT with Anti-parallel Lateral Rectifier to Reduce the Negative Resistance Effect", IEEE Transactions on Power Electronics, 40(5), 2025, 6860-6873. 

3. Lingyan Shen, et al., "A Fin-gate P-GaN HEMT with High Threshold Voltage and Improved Dynamic Performance", Microelectronics Journal, 153, 2024, 106442. 

4. Lingyan Shen, et al., "A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability", 81st Device Research Conference (DRC), Santa Barbara, California, 2023. 

5. Da Wang, Li Zheng, Xinhong Cheng, Lingyan Shen, et al., "Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge with Partial Recessed-Gate HEMTs", IEEE Transactions on Electron Devices, 70(6), 2023, 2975-2980.

6. Xiaobo Liu, Li Zheng*, Xinhong Cheng*, Lingyan Shen*, et al., "Graphene-induced Positive Shift of the Flat Band Voltage in Recessed Gate AlGaN/GaN Structures", Applied Physics Letters, 118, 2021, 173504. 

7. Lingyan Shen, et al. "Investigation on Premature Breakdown Mechanisms in AlGaN/GaN HEMTs by TCAD simulations", IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT), Kunming, 2020.