氮化铝材料与器件
zqmu@mail.sim.ac.cn
个人履历
母志强,现任中国科学院上海微系统与信息技术研究所研究员、博士生导师。2016年于中科院上海微系统所取得博士学位,曾在联华电子(UMC)新加坡公司从事集成电路先进工艺和器件研发工作,具有丰富的集成电路材料与器件工艺研发经验。于2020年7月加入中国科学院上海微系统与信息技术研究所。
母志强长期从事集成电路材料与工艺器件领域研究工作,目前主要研究方向为氮化铝材料与器件。在Nano Letters、IEEE Electron Device Letters、IEEE IUS等期刊发表SCI论文10余篇,申请专利30余件。入选中科院海外人才计划、上海市海外高层次人才。
代表性论文
1. Ruidong Qin, Congquan Zhou, Wentong Dou, Jinghong Lu, Yumeng Yang, Zhiqiang Mu, Wenjie Yu, 3.3 GHz BAW Resonators Fabricated on Single Crystal AlN Templates, 2023 IEEE International Ultrasonics Symposium (IUS), Montreal, QC, Canada, 2023, pp. 1-4.
2. Wentong Dou, Congquan Zhou, Ruidong Qin, Yumeng Yang, Huihui Guo, Zhiqiang Mu, Wenjie Yu, Super-High-Frequency Bulk Acoustic Resonators Based on Aluminum Scandium Nitride for Wideband Applications, Nanomaterials 2023, 13(20), 2737.
3. Jiang, Wenzheng, Lei Zhu, Lingli Chen, Yumeng Yang, Xi Yu, Xiaolong Li, Zhiqiang Mu, and Wenjie Yu, In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications, Materials, 2023, 16(5),1781.
4. Qiang Liu, Zhiqiang Mu, Chenhe Liu, Lantian Zhao, Lingli Chen, Yumeng Yang, Xing Wei, Wenjie Yu, Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate, IEEE Electron Device Letters, 2021, 42(5), 657-660.
5. Lantian Zhao, Qiang Liu, Chenhe Liu, Lingli Chen, Yumeng Yang, Xing Wei, Zhiqiang Mu, Wenjie Yu, Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate, IEEE Electron Device Letters, 2021, 42(10), 1428-1431.