2017年论文
序号 |
论文名称 |
作者 |
刊物名称 |
年,卷,期,页 |
1 |
Monolayer WxMo1-xS2Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors |
Liu, Xinke; Wu, Jing; Yu, Wenjie; Chen, Le; Huang, Zhonghui; Jiang, He; He, Jiazhu; Liu, Qiang; Lu, Youming; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Shun; Xiong, Xinbo; Xu, Wangying; Ao, Jin-Ping; Ang, Kah-Wee; He, Zhubing |
Advanced Functional Materials |
2017, 27, 13, - |
2 |
Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength |
Zhiqiang Mu, Haochi Yu, Miao Zhang, Aimin Wu, Gongmin Qi, Paul K. Chu, Zhenghua An, Zengfeng Di, and Xi Wang |
Nano Letters |
2017, 17, 3, 1552-1558 |
3 |
Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices |
Wang, Ziwen; Xue, Zhongying; Zhang, Miao; Wang, Yongqiang; Xie, Xiaoming; Chu, Paul K.; Zhou, Peng; Di, Zengfeng; Wang, Xi |
Small |
2017, 13, 28, - |
4 |
Lateral force modulation by moire superlattice structure: Surfing on periodically undulated graphene sheets |
Liu, Jun; Zhang, Shuai; Li, Qunyang; Feng, Xi-Qiao; Di, Zengfeng; Ye, Chang; Dong, Yalin |
Carbon |
2017, 125, /, 76-83 |
5 |
Enhanced fluorescence of functionalized silica microsphere based on whispering gallery mode for nitrate ester explosives and hexogen vapour detection |
Xiangtao Zhang, Defeng Zhu, Yanyan Fu, Qingguo He, Huimin Cao, Wei Li and Jiangong Cheng |
Journal of Materials Chemistry C |
2017, /, 2114- |
6 |
3D local manipulation of the metal-insulator transition behavior in VO2 thin film by defect-induced lattice engineering |
Qi Jia, J?rg Grenzer, Huabing He, Wolfgang Anwand, Yanda Ji, Ye Yuan, Kai Huang, Tiangui You, Wenjie Yu, Wei Ren, Xinzhong Chen, Mengkun Liu, Stefan Facsko, Xi Wang and Xin Ou |
Advanced Materials interfaces |
2017, 5, 8, - |
7 |
Forging Fast Ion Conducting Nanochannels with Swift Heavy Ions: The Correlated Role of Local Electronic and Atomic Structure |
Sachan, Ritesh, Cooper, Valentino R., Liu, Bin, Aidhy, Dilpuneet S., Voas, Brian K., Lang, Maik, Ou, Xin, Trautmann, Christina, Zhang, Yanwen, Chisholm, Matthew F., Weber, William J. |
Journal of Physical Chemistry C |
2017, 121, 1, 975-981 |
8 |
Band alignment between PEALD-AlNO and AlGaN/GaN determined by angle-resolved X-ray photoelectron spectroscopy |
Qian Wang, Xinhong Cheng, Li Zheng, Peiyi Ye, Menglu Li, Lingyan Shen, Jingjie Li, Dongliang Zhang, Ziyue Gu, Yuehui Yu |
Applied Surface Science |
2017, 423, /, 675-679 |
9 |
Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer |
Wang, Qian; Cheng, Xinhong; Zheng, Li; Ye, Peiyi; Li, Menglu; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue; Yu, Yuehui |
Applied Surface Science |
2017, 416, /, 326-331 |
10 |
Interfacial chemistry and energy band alignment of TiAlO on 4H-SiC determined by X-ray photoelectron spectroscopy |
Wang, Qian; Cheng, Xinhong; Zheng, Li; Ye, Peiyi; Li, Menglu; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue; Yu, Yuehui |
Applied Surface Science |
2017, 409, /, 71-76 |
11 |
Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates |
Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi |
Scientific Reports |
2017, 7, 1, - |
12 |
Ti mediated highly oriented growth of uniform and smooth Ni(Si0.8Ge0.2) layer for advanced contact metallization |
Ping, Yunxia; Hou, Chunlei; Zhang, Chaomin; Yu, Wenjie; Xue, Zhongying; Wei, Xing; Peng, Wei; Di, Zengfeng; Zhang, Miao; Zhang, Bo |
Journal of Alloys and Compounds |
2017, 693, /, 527-533 |
13 |
Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy |
Liu, Xinke; Chen, Le; Liu, Qiang; He, Jiazhu; Li, Kuilong; Yu, Wenjie; Ao, Jin-Ping; Ang, Kah-Wee |
Journal of Alloys and Compounds |
2017, 698, /, 141-146 |
14 |
Controllable cracking behavior in Si/Si0.70Ge0.30/Si heterostructure by tuning the H+ implantation energy |
Chen, Da; Zhang, Nan; Wang, Bei; Xu, Anli; Li, Ya; Yang, Siwei; Wang, Gang; Guo, Qinglei |
Applied Physics Letters |
2017, 111, 6, - |
15 |
Exceptional transport property in a rolled-up germanium tube |
Guo, Qinglei; Wang, Gang; Chen, Da; Li, Gongjin; Huang, Gaoshan; Zhang, Miao; Wang, Xi; Mei, Yongfeng; Di, Zengfeng |
Applied Physics Letters |
2017, 110, 11, - |
16 |
Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation |
Lingyan Shen, Dongliang Zhang, Xinhong Cheng, Li Zheng, Dawei Xu, Qian Wang, Jingjie Li, Duo Cao, and Yuehui Yu |
IEEE Electron Device Letters |
2017, 38, 5, 596-599 |
17 |
Experimental Investigation of C-V Characteristics of Si Tunnel FETs |
Liu, Chang; Glass, Stefan; Gia Vinh Luong, Narimani, Keyvan; Han, Qinghua; Tiedemann, Andreas T., Fox, Alfred; Yu, Wenjie; Wang, Xi; Mantl, Siegfried; Zhao, Qing-Tai |
IEEE Electron Device Letters |
2017, 38, 6, 818-821 |
18 |
Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
Wang, Qian; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Qian, Ru; Yu, Yuehui |
RSC Advances |
2017, 7, 19, 11745-11751 |
19 |
Investigation of Copper-Carbon Nanotube Composites as Global VLSI Interconnects |
Cheng, Zi-Han; Zhao, Wen-Sheng; Dong, Linxi; Wang, Jing; Zhao, Peng; Gao, Haijun; Wang, Gaofeng |
IEEE Transactions on Nano Technology |
2017, 16, 6, 891-900 |
20 |
Wrinkled Single-Crystalline Germanium Nanomembranes for Stretchable Photodetectors |
Guo, Qinglei; Fang, Yangfu; Zhang, Miao; Huang, Gaoshan; Chu, Paul K.; Mei, Yongfeng; Di, Zengfeng; Wang, Xi |
IEEE Transactions on Electron Devices |
2017, 64, 5, 1985-1990 |
21 |
Physical Models of Planar Spiral Inductor Integrated on the High-Resistivity and Trap-Rich Silicon-on-Insulator Substrates |
Liu, Shuangke; Zhu, Lei; Allibert, Frederic; Radu, Ionut; Zhu, Xinen; Lu, Yumin |
IEEE Transactions on Electron Devices |
2017, 64, 7, 2775-2781 |
22 |
Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3bilayer mask |
Li, Jingjie; Cheng, Xinhong; Wang, Qian; Zheng, Li; Shen, Lingyan; Li, Xinchang; Zhang, Dongliang;, Zhu, Hongyue; Shen, DaShen; Yu, Yuehui |
Materials Science in Semiconductor Processing |
2017, 67, /, 104-109 |
23 |
A 280-KBytes Twin-Bit-Cell Embedded NOR Flash Memory with a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems |
Xu, Yiran; Zhu, Wenyi; Xiao, Jun; Yang, Guangjun; Hu, Jian; Zhang, Shengbo; Huang, Mingyong; Kong, Weiran; Zou, Shichang |
IEEE Transactions on Circuit and Systems II-Express Briefs |
2017, 65, 11, 1569-1573 |
24 |
Multi-level switching in TiOxFy film with nanoparticles |
Sun, Xiangyu; Wu, Chuangui; Shuai, Yao; Pan, Xinqiang; Luo, Wenbo; You, Tiangui; Du, Nan; Schmidt, Heidemarie |
Journal of Physics D-Applied Physics |
2017, 50, 38, - |
25 |
Investigation and process optimization of SONOS cell's drain disturb in 2-transistor structure flash arrays |
Xu, Zhaozhao; Qian, Wensheng; Chen, Hualun; Xiong, Wei; Hu, Jun; Liu, Donghua; Duan, Wenting; Kong, Weiran; Na, Wei; Zou, Shichang |
Solid-State Electronics |
2017, 129, /, 44-51 |
26 |
Steep subthreshold slope characteristics of body tied to gate NMOSFET in partially depleted SOI |
Song, Lei; Hu, Zhiyuan; Liu, Zhangli; Xin, Haiwei; Zhang, Zhengxuan; Zou, Shichang |
Solid-State Electronics |
2017, 130, /, 15-19 |
27 |
Modeling and Characterization of Coaxial Through-Silicon Via With Electrically Floating Inner Silicon |
Zhao, Wen-Sheng; Zheng, Jie; Wang, Jing; Liang, Feng; Wen, Fei; Dong, Linxi; Wang, Dingwen; Wang, Gaofeng |
IEEE Transactions on Components Packing and Manufacturing Technology |
2017, 7, 6, 936-943 |
28 |
Defects induced by MeV H+ implantation for exfoliating of free-standing GaN film |
Kai Huang, Tiangui You, Qi Jia, Shibin Zhang, Runchun Zhang, Jiajie Lin, Min Zhou, Wenjie Yu, Bo Zhang, Xin Ou, and Xi Wang |
Applied Physics A |
2017, 124, 2, - |
29 |
New insights on ion track morphology in pyrochlores by aberration corrected scanning transmission electron microscopy |
Sachan Ritesh, Zhang Yanwen, Ou Xin, Trautmann ChristinaChisholm Matthew F, Weber William J |
Journal of Materials Research |
2017, 32, 5, 928-935 |
30 |
1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material |
Liu, Xinke; Liu, Qiang; Li, Chao; Wang, Jianfeng; Yu, Wenjie; Xu, Ke; Ao, Jin-Ping |
Japanese Journal of Applied Physics |
2017, 56, 2, - |
31 |
A 0.6-V sub-mW X-band RFSOI CMOS LNA with novel complementary current-reused technique |
Dai, Ruofan |
International Journal of Circuit Theory and Applications |
2017, 45, 12, 2046-2056 |
32 |
A duplex current-reused CMOS LNA with complementary derivative superposition technique |
Dai, Ruofan; Zheng, Yunlong; He, Jun; Kong, Weiran; Zou, Shichang |
International Journal of Circuit Theory and Applications |
2017, 45, 1, 110-119 |
33 |
Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation |
Chen, Zhuojun; Lin, Min; Ding, Ding; Zheng, Yunlong; Sang, Zehua; Zou, Shichang |
IEEE Transactions on Nuclear Science |
2017, 64, 1, 106-112 |
34 |
Improved Single-Event Transient Hardness in Tunnel-Diode Body-Contact SOI nMOS |
Xu, Lingda; Luo, Jiexin; Chen, Jing; Chai, Zhan; He, Weiwei; Zhang, En Xia; Fleetwood, Daniel M. |
IEEE Transactions on Nuclear Science |
2017, 64, 10, 2669-2672 |
35 |
Enhanced Radiation Hardness in SOI MOSFET With Embedded Tunnel Diode Layer |
Huang, Huixiang; Wei, Sufen; Tang, Kai; Pan, Jinyan; Xu, Wenbin; Wei, Yafen; Wu, Yiliang; Chen, Jinhai; Mei, Qiang; Zhang, Zhengxuan; Geng, Li |
IEEE Transactions on Nuclear Science |
2017, 64, 8, 2369-2376 |
36 |
Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node |
Zhang, Leqing; Xu, Jialing; Fan, Shuang; Dai, Lihua; Bi, Dawei; Lu, Jian; Hu, Zhiyuan; Zhang, Mengying; Zhang, Zhengxuan |
IEEE Transactions on Nuclear Science |
2017, 64, 1, 683-688 |
37 |
Defect formation in MeV H+ implanted GaN and 4H-SiC investigated by cross-sectional Raman spectroscopy |
Huang, Kai; Jia, Abqi; You, Tiangui; Zhang, Shibin; Lin, Jiajie; Zhang, Runchun; Zhou, Min; Yu, Wenjie; Zhang, Bo; Ou, Xin; Wang, Xi |
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms |
2017, 406, /, 656-661 |
38 |
A macro SPICE model for 2-bits/cell split-gate flash memory cell |
Liu, Xiaonian; Xu, Yiran; Fan, Xiangquan; Liao, Mengxing; Li, Pingliang; Zou, Shichang |
Microelectronics Journal |
2017, 63, /, 75-80 |
39 |
Bifurcated overtones of one-way localized Fabry-Perot resonances in parity-time symmetric optical lattices |
Gaafer, Fatma Nafaa; Shen, Yaxi; Peng, Yugui; Wu, Aimin; Zhang, Peng; Zhu, Xuefeng |
Chinese Physics B |
2017, 26, 7, 74218- |
40 |
Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing |
Meng, Xiao-Ran; Ping, Yun-Xia; Yu, Wen-Jie; Xue, Zhong-Ying; Wei, Xing; Zhang, Miao; Di, Zeng-Feng; Zhang, Bo; Zhao, Qing-Tai |
Chinese Physics B |
2017, 26, 9, - |
41 |
Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs |
Fan, Shuang; Hu, Zhi-Yuan; Zhang, Zheng-Xuan; Ning, Bing-Xu; Bi, Da-Wei; Dai, Li-Hua; Zhang, Meng-Ying; Zhang, Le-Qing |
Chinese Physics B |
2017, 26, 3, - |
42 |
Investigation of low-fluence hydrogen implantation-induced cracking in B doped Si0.70Ge0.30 |
Chen, Da; Guo, Qinglei; Zhang, Nan; Wang, Bei; Xu, Anli; Li, Ya; Yang, Siwei; Wang, Gang |
Journal of Vacuum Science & Technology B |
2017, 35, 4, - |
43 |
Fabrication of radiation hardened SOI with embedded Si nanocrystal by ion-cut technique |
Chang, Yongwei; Cheng, Shi; Dai, Lihua; Chen, Da; Xue, Zhongying; Dong, Yemin; Wei, Xing; Wang, Xi |
Journal of Vacuum Science & Technology B |
2017, 35, 2, - |
44 |
Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs |
Dai, Lihua; Liu, Xiaonian; Zhang, Mengying; Zhang, Leqing; Hu, Zhiyuan; Bi, Dawei; Zhang, Zhengxuan; Zou, Shichang |
Microelectronics Reliability |
2017, 74, /, 74-80 |
45 |
Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology |
Song, Lei; Hu, Zhiyuan; Zhang, Mengying; Liu, Xiaonian; Dai, Lihua; Zhang, Zhengxuan; Zou, Shichang |
Microelectronics Reliability |
2017, 74, /, 1-8 |
46 |
Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs |
Peng, Chao; En, Yunfei; Zhang, Zhengxuan; Liu, Yuan; Lei, Zhifeng |
Microelectronics Reliability |
2017, 75, /, 135-141 |
47 |
Radio-Frequency Characteristics of Partial Dielectric Removal HR-SOI and TR-SOI Substrates |
Cheng, Shi; Chang, Yong-Wei; Gao, Nan; Dong, Ye-Min; Fei, Lu; Wei, Xing; Wang, Xi |
Chinese Physics Letters |
2017, 34, 6, - |
48 |
Experimental I-V and C-V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi2 Contacts and Dopant Segregation |
Wang, Yi-Ze; Liu, Chang; Cai, Jian-Hui; Liu, Qiang; Liu, Xin-Ke; Yu, Wen-Jie; Zhao, Qing-Tai |
Chinese Physics Letters |
2017, 34, 7, - |
49 |
Total Ionizing Dose Response of Different Length Devices in 0.13 μm Partially Depleted Silicon-on-Insulator Technology |
Zhang, Meng-Ying; Hu, Zhi-Yuan; Zhang, Zheng-Xuan; Fan, Shuang; Dai, Li-Hua; Liu, Xiao-Nian; Song, Lei |
Chinese Physics Letters |
2017, 34, 8, 088501-1-088501–4 |
50 |
Total-Ionizing-Dose-Induced Body Current Lowering in the 130 nm PDSOI I/O NMOSFETs |
Liu, Xiao-Nian; Dai, Li-Hua; Ning, Bing-Xu; Zou, Shi-Chang |
Chinese Physics Letters |
2017, 34, 1, 016103-1-016103-4 |
51 |
Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Technology Node |
Le-Qing Zhang, · Jian Lu, · Jia-Ling Xu, · Xiao-Nian Liu, · Zheng-Xuan Zhang |
Chinese Physics Letters |
2017, 34, 11, 118504-1-118504-4 |
52 |
A high voltage multiplexer with rail to rail output swing for battery management system applications |
Li, Xinchang; Xu, Dawei; Zhu, Hongyue; Chen, Zhuojun; Yang, Zhiqiang; Cheng, Xinhong; Yu, Yuehui; Ng, Wai Tung |
IEICE Electronics Express |
2017, 14, 1, - |
53 |
A high voltage multiplexer with rail to rail output swing for battery management system applications |
Xinchang Li, Dawei Xu, Hongyue Zhu, Zhuojun Chen, Zhiqiang Yang, Xinhong Cheng, Yuehui Yu, and Wai Tung Ng |
IEICE Electronics Express |
2017, 14, 1, 1-8 |
54 |
An improved noise immune level-shifter via IGBT gateemitter voltage detection |
Hongyue Zhu, Dawei Xu, Xinchang Li, Chao Xu, Dengpeng Wu, Xinhong Cheng, and XiaoYun Li |
IEICE Electronics Express |
2017, 15, 9, 1-7 |
55 |
Area-efficient charge pump with local boost technique for embedded flash memory |
Xu, Yiran, Zhu, Wenyi, Xiao, Jun, Yang, Guangjun, Hu, Jian, Li, Xiaoyun, Kong, Weiran, Zou, Shichang |
IEICE Electronics Express |
2017, 14, 21, - |
56 |
基于GaNHEMT同步整流Buck变换器研究 |
羊志强,徐大伟,李新昌,程新红 |
电力电子技术 |
2017, 51, 9, 20-23 |
57 |
多种典型土壤结构下的电磁波透地回波信号分析 |
罗雪,何涛,吴才先,芮径,文立军,李伟,蔡正杰 |
功能材料与器件学报 |
2017, 23, /, 110-110 |
58 |
基于电磁波逆散射成像技术的地下目标探测研究 |
罗雪,何涛,王家杰,李欣洋,袁禾,李伟,蔡正杰 |
功能材料与器件学报 |
2017, 23, /, 114-114 |
59 |
基于非相干OFDR的分布式传感电力电缆温度在线监测和载流量计算 |
徐朝,严加义,毛天奇,曾宪武,李桂顺,李伟 |
功能材料与器件学报 |
2017, 23, 5, 119-124 |
60 |
0. 13 μm SOI标准单元库抗总剂量辐射的测试验证 |
卢仕龙,刘汝萍,林敏,俞跃辉,董业民 |
Semiconductor Technology半导体技术 |
2017, 42, 6, 469-474 |
61 |
基于0. 13μm CMOS的WiFi功率放大器设计 |
齐文正,林敏,杨根庆,董业民,黄水根 |
Semiconductor Technology半导体技术 |
2017, 42, 3, 178-183 |
62 |
SOI材料和器件抗辐射加固技术 |
张正选,邹世昌 |
《科学通报》 |
2017, 62, 10, 1004-1017 |