Qiang LIU, assistant professor at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. He obtained his Ph.D. from the Shanghai Institute of Microsystem and Information Technology in 2021 and has worked at the Shanghai Industrial Technology Research Institute and the Shanghai Institute of IC Materials on the development of advanced SOI substrate materials and the research and development of advanced integrated circuit devices. He has extensive experience in the research and development of integrated circuit materials and device processes, he joined the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in June 2022. Qiang LIU has long been engaged in research on integrated circuit materials and process devices,and his current main research direction is advanced SOI substrate materials and novel CMOS device integration technology. He has published over 10 SCI papers in journals such as IEEE Electron Device Letters,IEEE Transactions of Electron Devices,Photonics Research,and IEEE Journal of the Electron Devices Society.

He has applied for more than 50 invention patents,and more than 20 patents have been authorized. He has been selected as one of the high-level imported talents in Jiading District,Shanghai Super Postdoctoral Program,and the Shanghai Rising Star Sailing Program.

Selected Publications：

1. Jin CHEN, Qiang LIU, Yuxin LIU, Zhiqiang MU, Xing WEI, Wenjie YU, A Novel Approach to Integrating Thermal Performance and Total Ionizing Dose Hardening in Void Embedded Silicon-on-insulator MOSFET, IEEE Transactions of Electron Devices，2025, 72(1), 51-56.202,72(1),72(1),51-56.

2. Jin CHEN, Qiang LIU, Zhiqiang MU, Xing WEI, Wenjie YU, Total Ionizing Dose Hardening of Planar SOI MOSFET Through an Optimal Design Combining Embedded Void and H-Gate Structures, IEEE Electron Device Letters, 2023, 44(10):1608-1611.

3. Yijun QIAN, Qiang LIU, Jialun YAO, Xiaowei WANG, Amit Kumar SHUKLA, Fengyu LIU, Tao WU, Kai LU, Yemin DONG, Xing WEI, Wenjie YU, Zhiqing MU, Yumeng YANG, Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET, IEEE Journal of the Electron Devices Society, 2023, 11: 319-324.

4. Qiang LIU, Hongyang ZHOU, Xin JIA, Yumeng YANG, Zhiqiang MU, Xing WEI, Wenjie YU, Novel void embedded design for total ionizing dose hardening of silicon-on-insulator MOSFET, IEEE Electron Device Letters, 2022, 43(11), 1814-1817.

5. Qiang LIU, Zhiqiang MU, Chenhe LIU, Lantian ZHAO, Lingli CHEN, Yumeng YANG, Xing WEI, Wenjie YU, Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate, IEEE Electron Device Letters, 2021,42(5), 657-660.