In the post-Moore era, innovations in substrate materials and device integration technologies have become key driving forces for the development of integrated circuit technology. Silicon-on-insulator (SOI) substrate materials offer unique features such as buried oxide isolation and back-gate control, while demonstrating greater process flexibility compared to bulk silicon substrates. These materials have found extensive applications in low-power, high-frequency communication, power electronics, and sensor fields, showing promising development prospects.

In semiconductor manufacturing, the continuously shrinking feature sizes impose increasingly stringent requirements on the surface planarity and smoothness of wafers and thin films. Chemical Mechanical Polishing (CMP) technology, capable of meeting wafer processing demands in terms of both machining performance and speed, currently stands as the only technique capable of achieving global planarization.

Bulk acoustic wave (BAW) filters are widely used in high-frequency mobile communication due to its high power handling capability with the merits of compact size, low loss and high isolation. Aluminum Nitride (AlN) piezoelectric film is an ideal material for the piezoelectric layer of BAW devices due to its advantages of high longitudinal velocity and stiffness, low temperature coefficient and chemical stability. However, challenges emerge as the working frequency of wireless communication increases. The requirement of continuous thinning of AlN films towards sub-micrometer would cause a rapid deterioration of its crystalline quality, further resulting in a significant degradation of device performance.

Electron beam sources serve as core components in equipment such as scanning electron microscopes (SEM), transmission electron microscopes (TEM), and electron beam lithography (EBL) systems. They are widely used throughout the entire integrated circuit manufacturing cycle, including photomask fabrication, wafer inspection, and microstructural characterization of components.

Electronic chemicals are specialized chemical materials specially designed for the manufacturing of electronic information products, and are important support materials for the electroplating, cleaning, etching, photolithography and other processes in the manufacturing of integrated circuits, and are high-tech products combining electronic materials and specialized chemicals. The electroplating process in wet process is an important deposition process for metal interconnect, which is characterized by bottom-up film deposition, and the void-free filling of metal interconnect can be realized by regulating the process conditions of electroplating and additive formulations.

With the advancement of process technologies and materials, the requirements for the precision, accuracy, and repeatability of material analysis techniques are continuously and rapidly escalating. Taking wet electronic chemicals as an example, the detection limit for elemental impurities at the G5 grade is in the parts-per-trillion (ppt) range, while the development of G6-grade chemicals demands detection limits reaching the parts-per-quadrillion (ppq) level. Furthermore, new semiconductor materials and process materials encompass an extremely broad range, involving thousands of categories with significant variations among them, necessitating diverse and sophisticated advanced analytical characterization technologies.

The development of integrated circuit materials faces challenges such as complex mechanisms, numerous elemental components, and difficulties in multi-process compatibility, creating an increasing demand for novel research paradigms. The Integrated Circuit Materials Genome Technology system represents an innovative and efficient research framework that accelerates material development by establishing the "composition-structure-property-performance" relationship for integrated circuit materials.