Aluminum nitride (AlN), as a quintessential ultra-wide bandgap semiconductor material, exhibits exceptional properties including a large bandgap (6.2 eV), high thermal conductivity (320 W/m·K), high melting point (2200°C), distinctive piezoelectric effects, and broad spectral response (from deep ultraviolet to infrared wavelengths). Through doping, its bandgap can be tuned and ferroelectric effects can be activated, making AlN a pivotal material for overcoming current technological limitations and driving future advancements in information and energy technologies. These characteristics enable its widespread applications in RF communications, power electronics, photodetection, and smart sensing.

Our research group focuses on AlN material growth and heterogeneous integration technologies, developing AlN-based devices such as RF filters, power devices, and ferroelectric devices.