In the post-Moore era, innovations in substrate materials and device integration technologies have become key driving forces for the development of integrated circuit technology. Silicon-on-insulator (SOI) substrate materials offer unique features such as buried oxide isolation and back-gate control, while demonstrating greater process flexibility compared to bulk silicon substrates. These materials have found extensive applications in low-power, high-frequency communication, power electronics, and sensor fields, showing promising development prospects.

Our research group focuses on the evolving needs of advanced integrated circuits by developing a series of novel SOI substrate materials and diverse device integration technologies. We investigate device technologies for high-performance and high-reliability applications, combining semiconductor physics with practical implementations to establish SOI materials and integration technologies with distinctive proprietary characteristics. The main research include:

1. Development of novel SOI substrate fabrication technologies, including advanced layer transfer techniques and specialized SOI substrate preparation methods;

2. Research on SOI device technologies for high-performance and low-power applications, encompassing SOI Gate-All-Around (GAA) devices, multi-gate devices, and vacuum-channel devices;

3. Investigation of cryogenic microelectronics device technologies, focusing on high-performance MOSFETs optimized for low-temperature environments.