Electron beam sources serve as core components in equipment such as scanning electron microscopes (SEM), transmission electron microscopes (TEM), and electron beam lithography (EBL) systems. They are widely used throughout the entire integrated circuit manufacturing cycle, including photomask fabrication, wafer inspection, and microstructural characterization of components.

Traditional electron beam sources typically employ single-crystal cathode filaments or needle tips to generate single electron beams. However, these conventional sources suffer from poor performance consistency, weak integration capability, high power consumption, and face significant international patent barriers. Leveraging porous silicon substrate materials, our research group has developed an electron beam source with excellent emission capability. The device fabrication process demonstrates high compatibility with conventional CMOS integration technology, potentially enabling the miniaturization of electron beam sources into chip-scale devices. This advancement could facilitate the application of multi-source, multi-beam electron beam systems, significantly improving the efficiency of existing electron beam equipment, simplifying electron optical systems, and promoting technological catch-up for domestic high-end electron beam devices.

Furthermore, building upon porous silicon material technology, our group has developed novel SOI substrate processing techniques and substrate surface modification technologies. We are committed to pioneering new technological pathways in substrate material preparation, integration processes, and novel device applications.