Lei ZHU, associate professor and master's supervisor, graduated with a Ph.D. from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2018. He has been approved for the Chinese Academy of Sciences' Distinguished Research Position, recognized as a scarce talent in Jiading District, and honored with the title of Young Innovative Individual in Changning District. As a team member, he has received the Science and Technology for Development Award from the Chinese Academy of Sciences. During his doctoral studies, he researched RFSOI materials for 5G radio frequency applications and achieved the development of a complete set of mass production processes for RF SOI substrates. In 2019, he participated in planning the interdisciplinary direction of the integrated circuit materials genome and, as a core member, established platforms for high-throughput experiments, materials computation, databases, and artificial intelligence. He successfully developed a full-wafer high-throughput PVD-ALD-XPS cluster equipment with independent intellectual property rights for the isolated deposition of multi-component thin films on a single wafer, deployed a dedicated database for integrated circuit materials supporting electronic notebooks, data analysis, and artificial intelligence modeling functions, and combined high-throughput materials computation and high-throughput experiments to screen for high dielectric constant, low-loss 5G radio frequency piezoelectric materials. By utilizing finite element simulation, molecular dynamics calculation, experiments, and artificial intelligence, he has constructed a structure-property relationship between polishing materials, polishing processes, and post-polishing effects, achieving the material design for 300mm silicon wafer polishing processes, etc. 

In recent years, he has continuously undertaken or participated in key projects such as the Key R&D Program of the Ministry of Science and Technology, the Key Core Technology Tackling Project of the Ministry of Science and Technology, the Key Deployment of the Chinese Academy of Sciences, and the Science and Technology Innovation Action Plan of Shanghai Municipality, etc. He has been granted 5 patents for invention, co-authored a monograph, and published more than 10 papers.

Selected Publications：

1. Lin, Z., Zhu, J., Huang, Q., Zhu, L*., Li, W., & Yu, W. (2024). Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments. Nanomaterials, 14(1), 127.

2. Wang, W., Zhu, J., Huang, Q., Zhu, L*., Wang, D., Li, W., & Yu, W. (2024). DFT Exploration of Metal Ion–Ligand Binding: Toward Rational Design of Chelating Agent in Semiconductor Manufacturing. Molecules, 29(2), 308.

3. He, Y., Li, X., Yang, J., Li, W., Li, G., Wu, T., ... & Zhu, L*. (2023). High-throughput screening giant bulk spin-split materials. Results in Physics, 49, 106490.

4. Jiang, W., Zhu, L., Chen, L., Yang, Y., Yu, X., Li, X., ... & Yu, W. (2023). In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications. Materials, 16(5), 1781.

5. Yu, X., Zhu, L., Li, X., Zhao, J., Wu, T., Yu, W., & Li, W. (2023). Doping Engineering for Optimizing Piezoelectric and Elastic Performance of AlN. Materials, 16(5), 1778.

6. Wei, T., Liu, Y., Li, M., Zhu, L., Yu, W., Xue, Z., & Wei, X. (2023). Experimental and numerical analysis of wafer-to-wafer uniformity in double-sided polishing. Precision Engineering, 82, 383-391.