Zhiqiang MU, professor and doctoral supervisor at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. He obtained his Ph.D. from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2016. He has worked at United Microelectronics Corporation (UMC) in Singapore, engaging in the research and development of advanced processes and devices for integrated circuits, and has extensive experience in the research and development of integrated circuit materials and device processes. He joined the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in July 2020. 

Zhiqiang MU has long been engaged in research on integrated circuit materials and process devices, and his current main research direction is aluminum nitride materials and devices. He has published more than 10 SCI papers in journals such as Nano Letters, IEEE Electron Device Letters, and IEEE IUS, and has applied for more than 30 patents. He has been selected for the Chinese Academy of Sciences' overseas talent program and Shanghai Overseas High-Level Talent Program.

Selected Publications：

1. Ruidong Qin, Congquan Zhou, Wentong Dou, Jinghong Lu, Yumeng Yang, Zhiqiang Mu, Wenjie Yu, 3.3 GHz BAW Resonators Fabricated on Single Crystal AlN Templates, 2023 IEEE International Ultrasonics Symposium (IUS), Montreal, QC, Canada, 2023, pp. 1-4.

2. Wentong Dou, Congquan Zhou, Ruidong Qin, Yumeng Yang, Huihui Guo, Zhiqiang Mu, Wenjie Yu, Super-High-Frequency Bulk Acoustic Resonators Based on Aluminum Scandium Nitride for Wideband Applications, Nanomaterials 2023, 13(20), 2737.

3. Jiang, Wenzheng, Lei Zhu, Lingli Chen, Yumeng Yang, Xi Yu, Xiaolong Li, Zhiqiang Mu, and Wenjie Yu, In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications, Materials, 2023, 16(5),1781.

4. Qiang Liu, Zhiqiang Mu, Chenhe Liu, Lantian Zhao, Lingli Chen, Yumeng Yang, Xing Wei, Wenjie Yu, Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate, IEEE Electron Device Letters, 2021, 42(5), 657-660. 

5. Lantian Zhao, Qiang Liu, Chenhe Liu, Lingli Chen, Yumeng Yang, Xing Wei, Zhiqiang Mu, Wenjie Yu, Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate, IEEE Electron Device Letters, 2021, 42(10), 1428-1431.