Wenjie YU, professor and doctoral supervisor, currently serves as the Deputy Director of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Chairman of Shanghai Integrated Circuit Materials Research Institute Co., Ltd., Vice Chairman of the 13th Shanghai Youth Federation, and Vice Chairman of the 3rd Council of the China Integrated Circuit Innovation Alliance. He obtained his bachelor's degree in Materials Physics from Fudan University in 2005; in 2011, he studied at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences and obtained his doctorate degree; during 2009 to 2011, he was funded by China Scholarship Council and studied at the Jurich Research Center in Germany as a joint doctoral student. Since June 2011, he has been working in Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. 

Wenjie YU has long been engaged in research in the field of integrated circuit materials, achieving innovative accomplishments in areas such as Silicon-on-Insulator (SOI), 300mm Silicon Wafer Planarization, and integrated circuit materials genome technology. He has published over 100 SCI-indexed papers in authoritative journals including IEEE Electron Device Letters, IEEE Transactions on Electron Devices, and Advanced Functional Materials, filed more than 120 invention patents, and authored the book “Integrated Circuit Materials Genome Technology”. He was awarded the 2022 Shanghai Special Prize for Scientific and Technological Progress, the 2023 CAS Science and Technology for Development Award, and was selected as a National Leading Talent in Scientific and Technological Innovation in 2022.

Selected Publications：

1. Qi Huang, Yedi Li, Lei Zhu, Wenjie Yu, Hierarchical Deep Potential with Structure Constraints for Efficient Coarse-Grained Modeling, Journal of Chemical Information and Modeling, 2025,65(7), 3203-3214.

2. Qi Huang, Zuowei Chen, Ziwei Lin, Weimin Li, Wenjie Yu, Lei Zhu, Enhancing Copolymer Property Prediction through the Weighted-Chained-SMILES Machine Learning Framework, ACS Applied Polymer Materials, 2024, 6(7): 3666-3675.

3. Jin Chen, Qiang Liu, Zhiqiang Mu, Xing Wei, Wenjie Yu, Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures, IEEE Electron Device Letters, 2023, 44(10): 1608-1611.

4. Qiang Liu, Hongyang Zhou, Xin Jia, Yumeng Yang, Zhiqiang Mu, Xing Wei, Wenjie Yu, Novel void embedded design for total ionizing dose hardening of silicon-on-insulator MOSFET, IEEE Electron Device Letters, 2022, 43(11), 1814-1817.

5. Wenjie Yu, Wangran Wu, Bo Zhang, Chang Liu, Jiabao Sun, Dongyuan Zhai, Yuehui Yu, Xi Wang, Yi Shi, Yi Zhao, Qing-Tai Zhao, Experimental Investigation on Alloy Scattering in sSi/ Si0.5Ge0.5/sSOI Quantum-Well p-MOSFET, IEEE Transactions on Electron Devices, 2014, 61(4): 950-952.

6. Wenjie Yu, Bo Zhang, Qing-Tai Zhao, Dan Buca, Xi Wang, Siegfried Mantl, Hole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi0.5Ge0.5/sSOI heterostructure, 2012 12th International Workshop on Junction Technology, IEEE, 2012: 246-247.