Lingyan SHEN, associate professor and master's supervisor at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. She received her Bachelor's degree in Applied Physics from Beijing University of Posts and Telecommunications in 2012 and her Ph.D. in Microelectronics and Solid-State Electronics from SIMIT, CAS in 2017. From 2015 to 2016, she was a joint-training Ph.D. student at the Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB) in Germany. She has been working at SIMIT, CAS since October 2017.

Lingyan SHEN has long been engaged in research on wide-bandgap semiconductor power devices and reliability, with extensive expertise in device structure design, fabrication processes, surface/interface optimization, and dynamic characterization. Her research achievements have been featured by the renowned semiconductor science news platform Semiconductor Today. She has published over 30 academic papers in journals such as IEEE Transactions on Power Electronics, IEEE Electron Device Letters, and IEEE Transactions on Electron Devices, and has filed 19 domestic and international patent applications. She has been selected for the Shanghai Young Scientific and Technological Talent Sailing Program and the Jiading District Young Scientific and Technological Talent Award.

Selected Publications：

1. Wenyao FENG†, Lingyan SHEN†, et al., "Dynamic Performance Analysis of p-GaN HEMTs with Floating Substrates by Substrate Capacitance Coupling Model", IEEE Transactions on Electron Devices, Available on line, 2025. 

2. Yufei TIAN, Ruiyan PAN, Lingyan SHEN*, et al., "Monolithic Integration of p-GaN HEMT with Anti-parallel Lateral Rectifier to Reduce the Negative Resistance Effect", IEEE Transactions on Power Electronics, 40(5), 2025, 6860-6873. 

3. Lingyan SHEN, et al., "A Fin-gate P-GaN HEMT with High Threshold Voltage and Improved Dynamic Performance", Microelectronics Journal, 153, 2024, 106442. 

4. Lingyan SHEN, et al., "A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability", 81st Device Research Conference (DRC), Santa Barbara, California, 2023. 

5. Da WANG, Li ZHENG, Xinhong CHENG, Lingyan SHEN, et al., "Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge with Partial Recessed-Gate HEMTs", IEEE Transactions on Electron Devices, 70(6), 2023, 2975-2980.

6. Xiaobo LIU, Li ZHENG*, Xinhong CHENG*, Lingyan SHEN*, et al., "Graphene-induced Positive Shift of the Flat Band Voltage in Recessed Gate AlGaN/GaN Structures", Applied Physics Letters, 118, 2021, 173504. 

7. Lingyan SHEN, et al. "Investigation on Premature Breakdown Mechanisms in AlGaN/GaN HEMTs by TCAD simulations", IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT), Kunming, 2020.