Paper

Equivalent Trap Energy Level Extraction for SiGe Using Gate-Induced-Drain-Leakage Current Analysis
Chang Liu, Wenjie Yu*, Bo Zhang, Zhongying Xue, Wangran Wu, Yi Zhao, Qingtai Zhao

Chinese Physics Letters
2014, 31(10): 106103. https://doi.org/10.1088/0256-307X/31/10/106103
Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-K LaLuO3 Gate Dielectric
Wenjie Yu, Bo Zhang, Chang Liu, Zhongying Xue, Ming Chen, Qingtai Zhao

Chinese Physics Letters
2014, 31(1): 016101. https://doi.org/10.1088/0256-307X/31/1/016101
Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs
Wenjie Yu, Bo Zhang, Chang Liu, Yi Zhao, W R Wu, Zhongying Xue, M Chen, D.Buca, Jean Michel Hartmann, Xi Wang, Qingtai Zhao, S. Mantl

Microelectronic Engineering
2014, 113: 5-9. https://doi.org/10.1016/j.mee.2013.06.015
Experimental Investigation on Alloy Scattering in sSi/Si0.5Ge0.5/sSOI Quantum-Well p-MOSFET
Wenjie Yu, Wangran Wu, Bo Zhang, Chang Liu, Jiabao Sun, Dongyuan Zhai, Yuehui Yu, Xi Wang, Yi Shi, Yi Zhao, and Qingtai Zhao

IEEE transactions on electron devices
2014, 61(4): 950-952. https://doi.org/10.1109/TED.2014.2304723