Paper
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High performance strained Si0.5Ge0.5 quantum-well p-MOSFETs fabricated using a high-k/metal-gate last processChang Liu, Jiao Wen, Wenjie Yu*, Bo Zhang, Zhongying Xue, Yongwei Chang, Lei Zhu, Xinke Liu*, Yi Zhao, Miao Zhang, Xi Wang, Qingtai Zhao