Paper
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Influence of Impurity Adsorption on Electrical Properties of Back-Gated MoS_2 Field Effect TransistorsJianhui Cai, Zhixi Chen, Chenhe Liu, Dongliang Zhang, Qiang Liu, Wenjie Yu, Xinke Liu, Zhongquan Ma2018, 41(6): 1367-1371. https://doi.org/10.3969/j.issn.1005-9490.2018.06.003Chinese Journal of Electron Devices