Paper

Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity
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Microelectronic Engineering
2016, 163: 115-118. https://doi.org/10.1016/j.mee.2016.06.017
Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs
Jiao Wen, Qiang Liu, Chang Liu, Yize Wang, Bo Zhang, Zhongying Xue, Zengfeng Di, Wenjie Yu, Qingtai Zhao

Journal of Semiconductors
2016, 37(9): 094002-1. https://doi.org/10.1088/1674-4926/37/9/094002