Paper

Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulatore Substrate
Qiang Liu, Zhiqiang Mu, Chenhe Liu, Lantian Zhao, Lingli Chen, Yumeng Yang, Xing Wei*, and Wenjie Yu*

IEEE Electron Device Letters
2021, 42(5): 657-660. https://doi.org/10.1109/LED.2021.3066171
Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate
Lantian Zhao, Qiang Liu, Chenhe Liu, Lingli Chen, Yumeng Yang, Xing Wei, Zhiqiang Mu, and Wenjie Yu

IEEE Electron Device Letters
2021, 42(10): 1428-1431. https://doi.org/10.1109/led.2021.3107851
TFET Current Mirror Based on Dopant Segregation Technology
Lingli Chen, Chang Liu, Qiang Liu, Lantian Zhao, Chenhe Liu, Yubo Zhu, Wenjie Yu

Semiconductor Technology
2021,46(5):365-369401. http://lib.cqvip.com/Qikan/Article/Detail?id=7104818797